Nah, I've tried different ram, and my previous 9900k couldn't do it either.
You might have to change others too, not only the park value, or increase vccio and vccsa voltages.
Read these for more info (taken from a long reddit post about RYZEN MEMORY OC):
ProcODT: Processor On-Die Termination Impedance. The resistance which a memory signal travelling to the CPU terminates at. This reduces signal noise and lowers how much the signal over- and undershoots the voltage that the signal should be sent at. From what I understand, going too low can allow signal noise to send faulty signals to the memory, but going too high can actually cause a signal to be absorbed and not reach the processor. This defaults to 53.3Ω.
Overclocking guidelines? : This is probably the most important value to change in this section to improve overclock stability. Notice I only said change, as it is generally accepted that RAM kits have different “preferences” for this value; that is, higher is not necessarily better. The overclocking community recommends keeping this in the range of 40Ω-80Ω, while AMD recommends 60Ω-96Ω. (However, for values of at least 80Ω, you should ensure that your memory is receiving some airflow.) As a rule of thumb, dual rank memory requires this value to be higher than single rank memory, but this does not mean that single rank memory cannot benefit from higher values.
RTT_PARK: Park On-Die Termination Impedance. The resistance at which signals sent to a memory die will terminate when ODT is low. I believe this is related to CKE LOW/Powerdown Mode. From what I can decipher, when RTT_NOM is disabled/off, this value seems to take over. This resistance can help prevent signal integrity loss to dies in which the memory is not executing write commands. The values for this are measured in terms of fractions of RZQ, which is a reference 240Ω resistor.
Overclocking guidelines? : To be honest I’m not really sure exactly how to tune this, but theoretically (and as corroborated by Ryzen DRAM Calculator) a higher value for this may be necessary to stabilize an overclock, as it should help signal integrity. However, like with ProcODT, too high of a resistance probably causes instability by way of signal absorption. Furthermore, several users have reported lower values working better. According to one Micron data sheet, this should be disabled for single-rank DIMMs and enabled for dual-rank DIMMs, but I have not tested this myself.
RTT_NOM: Nominal On-Die Termination Impedance. For high ODT, this is the termination resistance for signals sent to a memory die not being written to, but which is connected to one that is being written to. I believe this is related to CKE HIGH pulses. This resistance can help prevent signal integrity loss when the memory is not executing write commands. The values for this are also measured in terms of fractions of RZQ.
Overclocking guidelines? : See RTT_PARK.
RTT_WR: Dynamic/Write On-Die Termination Impedance. This is the resistance at which signals sending write commands to a memory die will terminate at. This resistance can help prevent signal integrity loss when the memory is executing write commands. The values for this are also measured in terms of fractions of RZQ.
Overclocking guidelines? : Like the previous two I don’t personally know how to tune these, and simply used DRAM Calculator values, but in theory higher can improve stability. Though again, several users have reported lower values working better. The aforementioned data sheet says that memory rank does not impact whether this should be enabled or disabled, so changing this may be purely trial and error and something of a matter of kit “preference.”