11-12-2020 11:47 AM - last edited on 03-05-2024 07:11 PM by ROGBot
Module Manufacturer: G.Skill
Module Part Number: F4-3600C16-16GTZN
Module Series: Trident Z Neo
DRAM Manufacturer: Samsung
DRAM Components: K4A8G085WB-BCPB
DRAM Die Revision / Process Node: B / 20 nm
XMP1 XMP2
Speed Grade: DDR4-3604 N/A
DRAM Clock Frequency: 1802 MHz N/A
Module VDD Voltage Level: 1.35 V N/A
Minimum DRAM Cycle Time (tCK): 0.555 ns N/A
CAS Latencies Supported: 16T N/A
CAS Latency Time (tAA): 16T N/A
RAS# to CAS# Delay Time (tRCD): 16T N/A
Row Precharge Delay Time (tRP): 16T N/A
Active to Precharge Delay Time (tRAS): 36T N/A
Active to Active/Refresh Delay Time (tRC): 52T N/A
Four Activate Window Delay Time (tFAW): 44T N/A
Short Activate to Activate Delay Time (tRRD_S): 4T N/A
Long Activate to Activate Delay Time (tRRD_L): 9T N/A
Normal Refresh Recovery Delay Time (tRFC1): 631T N/A
2x mode Refresh Recovery Delay Time (tRFC2): 469T N/A
4x mode Refresh Recovery Delay Time (tRFC4): 289T N/A
1.35v @ 1801 MHz 16-16-16-36 (CL-RCD-RP-RAS) / 52-631-469-289-9-4-44 (RC-RFC1-RFC2-RFC4-RRDL-RRDS-FAW)
DRAM Timing Parameters Fine Timebase: .001 ns
Medium Timebase: 0.125 ns
CAS Latencies Supported: 10T, 11T, 12T, 13T,14T, 15T, 16T
Minimum Clock Cycle Time (tCK min): 0.938 ns (1066.10 MHz)
Maximum Clock Cycle Time (tCK max): 1.500 ns (666.67 MHz)
CAS# Latency Time (tAA min): 13.750 ns
RAS# to CAS# Delay Time (tRCD min): 13.750 ns
Row Precharge Delay Time (tRP min): 13.750 ns
Active to Precharge Delay Time (tRAS min): 33.000 ns
Act to Act/Refresh Delay Time (tRC min): 46.750 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 350.000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 260.000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 160.000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3.700 ns
Long Row Active to Row Active Delay (tRRD_L min): 5.300 ns
Long CAS to CAS Delay Time (tCCD_L min): 5.625 ns
Four Active Windows Delay (tFAW min): 21.000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1.20 V operable/endurant: Yes/Yes
Supply Voltage (VDD), Min / Typical / Max: 1.16V / 1.20V / 1.26V
Activation Supply Voltage (VPP), Min / Typical / Max: 2.41V / 2.50V / 2.75V
Termination Voltage (VTT), Min / Typical / Max: 0.565V / 0.605V / 0.640V
11-12-2020 01:16 PM
11-12-2020 02:17 PM
11-12-2020 04:58 PM
bwana wrote:
Solved.
I moved the modules to slots A2 and B2 even though the board has A1 and B1 marked as primary
16-16-16-3800 tRFC 280 tFAW 30 VCCIO 1.312 VCCSA 1.296
AIDA Read 56081 Write 58417 Copy 53318 Latency 44.5ns
up to
17-17-17-38 ddr4266 vDIMM 1.45
AIDA Read 61262 Write 64087 Copy 58730 Latency 41.6ns
It would be nice if I could edit the title to include the word [SOLVED]
Hey moderator?
11-15-2020 05:12 AM
12-08-2020 04:55 PM
01-08-2021 09:03 PM