I discovered that Asustek motherboards can still damage the processor's SoC or at least cause instabilities and also make overclocking difficult. Precisely the overclocking options available, for some reason, may be sending excessive voltage and current overload. This can happen even without directly activating the overclocking features, simply for the user to activate the maximum clock value in their DDR5 memories, as long as it exceeds the 5200MHz standard.
trying to clock above this standard, 5200MHz, causes artifacts to occur, or random errors and even difficulty in maintaining an overclock above this mentioned standard. And all this even if you carry out stability tests for hours, meaning the problem may not arise immediately.
I detected that one of the culprits is the option "VDDSOC Current Compatibility", however, other parameters may come into play when the user, even if they do not activate overclocking options, starts to activate the XMP option (probably in EXPO too, but I have no way of testing). I have two memories that total 64GB (XMP only) where I could get up to 6200MHz in AGESA 1.0.0.7a, version 1616, and I tested versions "b" and "c" without success, generally having strange crashes and artifacts, when no attempt impedance adjustment did the work.
Suddenly, my system started to crash and I initially believed it could be bad memory, but seeing several other reviewers, they can achieve good overclocks and very low timings. I also started experiencing instability when trying to lower the clock to the DDR5 standard, which increased the pressure on these GeiIL 6400 memories. I uninstalled it and even checked to see if my metallic compound thermal paste was leaking, nothing like that and no physical problem with the memory. Until I looked at this option "VDDSOC Current Compatibility" and set it to 100%, so as not to change the value, then I was able to maintain at least the DDR5 5200MHz standard again.
Even so, I noticed that I couldn't raise the DDR5 clock even further, leaving it at 5600 or 6000MHz, but I've seen that it's not the memory, but there are problematic parameters on the motherboard that can cause these problems. And the higher we raise the memory clock, the more voltage (and current) is placed on the Memory Controller and the SoC.
My motherboard is Rog Strix B650E-E wifi and my DDR5 memories have the following IC identifying inscription:
H5CG48AEBD
X018 229A
DTAGH950WZ5
SK Hynix/ by GeIL 6400MHz/XMP
in version 1616 I still get at least 5200MHz, but I was getting up to 6200MHz working well or 6000MHz with great ease.
See below what it looks like now:
HWiNFO64 Version 7.50-5150
RYZEN_9_7950X -------------------------------------------------------------
[Current Computer]
[Operating System]
Operating System: Microsoft Windows 11 Professional (x64) Build 22621.2283 (22H2)
UEFI Boot: Present
Secure Boot: Disabled
Hypervisor-protected Code Integrity (HVCI): Enabled
Virtual Machine Warning: Microsoft Hyper-V is active. Some results may not reflect real hardware !
Central Processor(s) ------------------------------------------------------
[CPU Unit Count]
Number Of Processor Packages (Physical): 1
Number Of Processor Cores: 16
Number Of Logical Processors: 32
AMD Ryzen 9 7950X ---------------------------------------------------------
[General Information]
Processor Name: AMD Ryzen 9 7950X
Original Processor Frequency: 4500.0 MHz
Original Processor Frequency [MHz]: 4500
[Operating Points]
[Cache and TLB]
[Standard Feature Flags]
[Extended Feature Flags]
[Enhanced Features]
[Memory Ranges]
[MTRRs]
Motherboard ---------------------------------------------------------------
[Computer]
[Motherboard]
Motherboard Model: ASUS ROG STRIX B650E-E GAMING WIFI
[BIOS]
Memory --------------------------------------------------------------------
[General Information]
Total Memory Size: 64 GBytes
Total Memory Size [MB]: 65536
[Current Performance Settings]
Maximum Supported Memory Clock: 2800.0 MHz
Current Memory Clock: 2595.3 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 28-36-34-60
Memory Channels Supported: 2
Memory Channels Active: 2
Command Rate (CR): 1T
Read to Read Delay (tRDRD_SC) Same Chipselect: 1T
Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 6T
Read to Read Delay (tRDRD_DG/TrdrdScDlr) Different Bank Group: 9T
Read to Read Delay (tRDRD_DD) Different DIMM: 9T
Write to Write Delay (tWRWR_SC) Same Chipselect: 1T
Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 19T
Write to Write Delay (tWRWR_DG/TwrwrScDlr) Different Bank Group: 10T
Write to Write Delay (tWRWR_DD) Different DIMM: 10T
Read to Write Delay (tRDWR_SC) Same Chipselect: 20T
Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 20T
Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 20T
Read to Write Delay (tRDWR_SD) Same DIMM: 20T
Read to Write Delay (tRDWR_DD) Different DIMM: 20T
Write to Read Delay (tWRRD_SC) Same Chipselect: 8T
Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 8T
Write to Read Delay (tWRRD_SD) Same DIMM: 8T
Write to Read Delay (tWRRD_DD) Different DIMM: 8T
Read to Precharge Delay (tRTP): 20T
Write to Precharge Delay (tWTP): 71T
Write Recovery Time (tWR): 60T
RAS# to RAS# Delay (tRRD_L): 13T
RAS# to RAS# Delay (tRRD_S): 8T
Row Cycle Time (tRC): 127T
Refresh Cycle Time (tRFC): 512T
Four Activate Window (tFAW): 34T
Row: 1 [P0 CHANNEL A/DIMM 1] - 32 GB PC5-51200 DDR5 SDRAM GeIL CL32-39-39 D5-6400
[General Module Information]
Module Number: 1
Module Size: 32 GBytes
Memory Type: DDR5 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 3200.0 MHz (DDR5-6400 / PC5-51200)
Module Manufacturer: GeIL
Module Part Number: CL32-39-39 D5-6400
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: Year: 2023, Week: 15
Module Manufacturing Location: 1
SDRAM Manufacturer: SK Hynix
DRAM Steppping: N/A
Error Check/Correction: None
[Module Characteristics]
Rank Mix: Symmetrical
Row Address Bits: 16
Column Address Bits: 10
Module Density: 16384 Mb
Dies Per Package: 1
Device Width: x8
Number Of Bank Groups: 8
Banks Per Group: 4
Number Of Ranks: 2
Module Device Width: x4
Channels Per DIMM: x2
Primary Bus Width: x32
Bus Extension: None
Module Voltage (VDD): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VDDQ): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VPP): Nominal: 1.8V, Operable: 1.8V, Endurant: 1.8V
Wide Temperature Sense: Supported
Bounded Fault: Supported
BL32: Supported
Non-Standard Core Timings: Not Supported
Minimum SDRAM Cycle Time (tCKAVGmin): 0.41600 ns (2400 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.01000 ns
CAS# Latencies Supported: 22, 26, 28, 30, 32, 36, 40, 42
Minimum CAS# Latency Time (tAAmin): 16.666 ns
Minimum RAS# to CAS# Delay (tRCDmin): 16.666 ns
Minimum Row Precharge Time (tRPmin): 16.666 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 2400.0 MHz: 41-41-41-77
Supported Module Timing at 2200.0 MHz: 37-37-37-71
Supported Module Timing at 1800.0 MHz: 31-31-31-58
Supported Module Timing at 1600.0 MHz: 27-27-27-52
Minimum Active to Active/Refresh Time (tRCmin): 48.666 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbmin): 130.000 ns
Minimum Refresh Recovery Time Delay (tRFC1dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFC2dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbdlrmin): 0.000 ns
Activate to Activate Command Delay for Same Bank Group (tRRD_L): 5.000 ns
Read to Read Command Delay for Same Bank Group (tCCD_L): 5.000 ns
Write to Write Command Delay for Same Bank Group (tCCD_L_WR): 20.000 ns
Write to Write Command Delay for Same Bank Group, Second Write not RMW (tCCD_L_WR2): 10.000 ns
Four Activate Window (tFAW): 16.666 ns
Write to Read Command Delay for Same Bank Group (tCCD_L_WTR): 10.000 ns
Write to Read Command Delay for Different Bank Group (tCCD_S_WTR): 2.500 ns
Read to Precharge Command Delay (tRTP): 7.500 ns
SPD Manufacturer: Montage Technology Group
SPD Type: SPD5118
SPD Steppping: 1.5
PMIC0 Device: Present
PMIC0 Manufacturer: Richtek Power
PMIC0 Device Type: PMIC5100
PMIC0 Stepping: 1.1
PMIC0 Type: Small PMIC (Low Current)
PMIC0 Secure Mode: Disabled
Thermal Sensor 0: Not Present
Thermal Sensor 1: Not Present
DRAM Temperature Grade: Extended (XT) : 0 - 95 C
Heat Spreader: Not Present
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): <= 1 mm
[Intel Extreme Memory Profile (XMP)]
XMP Version: 3.0
Number of PMICs: 1
XMP(OC) PMIC: Supported
PMIC OC: Enabled
PMIC voltage default step size: 10 mV
[Enthusiast/Certified Profile [Enabled]]
Profile Name:
Recommended Channel Config: 1 DIMM per Channel
Module VDD Voltage Level: 1.40 V
Module VPP Voltage Level: 1.80 V
Module VDDQ Voltage Level: 1.40 V
Memory Controller Voltage Level: 1.40 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.31200 ns (3200 MHz)
CAS# Latencies Supported: 32
Minimum CAS# Latency Time (tAAmin): 9.984 ns
Minimum RAS# to CAS# Delay (tRCDmin): 12.187 ns
Minimum Row Precharge Time (tRPmin): 12.187 ns
Minimum Active to Precharge Time (tRASmin): 30.000 ns
Supported Module Timing at 3200.0 MHz: 32-40-40-97
Minimum Active to Active/Refresh Time (tRCmin): 42.187 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsb): 130.000 ns
Minimum Minimum Write Recovery Time (tWRmin): 30.000 ns
System Command Rate Mode: Default
Real-Time Memory Frequency Overclocking: Supported
Intel Dynamic Memory Boost: Not Supported
Row: 3 [P0 CHANNEL B/DIMM 1] - 32 GB PC5-51200 DDR5 SDRAM GeIL CL32-39-39 D5-6400
[General Module Information]
Module Number: 3
Module Size: 32 GBytes
Memory Type: DDR5 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 3200.0 MHz (DDR5-6400 / PC5-51200)
Module Manufacturer: GeIL
Module Part Number: CL32-39-39 D5-6400
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: Year: 2023, Week: 15
Module Manufacturing Location: 1
SDRAM Manufacturer: SK Hynix
DRAM Steppping: N/A
Error Check/Correction: None
[Module Characteristics]
Rank Mix: Symmetrical
Row Address Bits: 16
Column Address Bits: 10
Module Density: 16384 Mb
Dies Per Package: 1
Device Width: x8
Number Of Bank Groups: 8
Banks Per Group: 4
Number Of Ranks: 2
Module Device Width: x4
Channels Per DIMM: x2
Primary Bus Width: x32
Bus Extension: None
Module Voltage (VDD): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VDDQ): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VPP): Nominal: 1.8V, Operable: 1.8V, Endurant: 1.8V
Wide Temperature Sense: Supported
Bounded Fault: Supported
BL32: Supported
Non-Standard Core Timings: Not Supported
Minimum SDRAM Cycle Time (tCKAVGmin): 0.41600 ns (2400 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.01000 ns
CAS# Latencies Supported: 22, 26, 28, 30, 32, 36, 40, 42
Minimum CAS# Latency Time (tAAmin): 16.666 ns
Minimum RAS# to CAS# Delay (tRCDmin): 16.666 ns
Minimum Row Precharge Time (tRPmin): 16.666 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 2400.0 MHz: 41-41-41-77
Supported Module Timing at 2200.0 MHz: 37-37-37-71
Supported Module Timing at 1800.0 MHz: 31-31-31-58
Supported Module Timing at 1600.0 MHz: 27-27-27-52
Minimum Active to Active/Refresh Time (tRCmin): 48.666 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbmin): 130.000 ns
Minimum Refresh Recovery Time Delay (tRFC1dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFC2dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbdlrmin): 0.000 ns
Activate to Activate Command Delay for Same Bank Group (tRRD_L): 5.000 ns
Read to Read Command Delay for Same Bank Group (tCCD_L): 5.000 ns
Write to Write Command Delay for Same Bank Group (tCCD_L_WR): 20.000 ns
Write to Write Command Delay for Same Bank Group, Second Write not RMW (tCCD_L_WR2): 10.000 ns
Four Activate Window (tFAW): 16.666 ns
Write to Read Command Delay for Same Bank Group (tCCD_L_WTR): 10.000 ns
Write to Read Command Delay for Different Bank Group (tCCD_S_WTR): 2.500 ns
Read to Precharge Command Delay (tRTP): 7.500 ns
SPD Manufacturer: Montage Technology Group
SPD Type: SPD5118
SPD Steppping: 1.5
PMIC0 Device: Present
PMIC0 Manufacturer: Richtek Power
PMIC0 Device Type: PMIC5100
PMIC0 Stepping: 1.1
PMIC0 Type: Small PMIC (Low Current)
PMIC0 Secure Mode: Disabled
Thermal Sensor 0: Not Present
Thermal Sensor 1: Not Present
DRAM Temperature Grade: Extended (XT) : 0 - 95 C
Heat Spreader: Not Present
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): <= 1 mm
[Intel Extreme Memory Profile (XMP)]
XMP Version: 3.0
Number of PMICs: 1
XMP(OC) PMIC: Supported
PMIC OC: Enabled
PMIC voltage default step size: 10 mV
[Enthusiast/Certified Profile [Enabled]]
Profile Name:
Recommended Channel Config: 1 DIMM per Channel
Module VDD Voltage Level: 1.40 V
Module VPP Voltage Level: 1.80 V
Module VDDQ Voltage Level: 1.40 V
Memory Controller Voltage Level: 1.40 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.31200 ns (3200 MHz)
CAS# Latencies Supported: 32
Minimum CAS# Latency Time (tAAmin): 9.984 ns
Minimum RAS# to CAS# Delay (tRCDmin): 12.187 ns
Minimum Row Precharge Time (tRPmin): 12.187 ns
Minimum Active to Precharge Time (tRASmin): 30.000 ns
Supported Module Timing at 3200.0 MHz: 32-40-40-97
Minimum Active to Active/Refresh Time (tRCmin): 42.187 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsb): 130.000 ns
Minimum Minimum Write Recovery Time (tWRmin): 30.000 ns
System Command Rate Mode: Default
Real-Time Memory Frequency Overclocking: Supported
Intel Dynamic Memory Boost: Not Supported
I returned version 1616 and got the watch again:
