Still running 2103.
No troubles so far, jumping from 1302 to 2103 via flashback.
B-die 4x 16Gb C-14 still troublesome.
Hynix 4x 16Gb stability @3466+ improved. Tuning now 3466 C16, and going to 3600
🙂Update:
Samsung B-die 4x 16Gb @3200 C15 1,425V.
Hynix 4x 16Gb stable @3666 C16 1,375V.
CAS Latency (CL) 16T
RAS To CAS Delay (tRCD) 19T
RAS Precharge (tRP) 19T
RAS Active Time (tRAS) 36T
Row Cycle Time (tRC) 64T
Row Refresh Cycle Time (tRFC) 560T, 2x Fine: 478T, 4x Fine: 294T
Command Rate (CR) 1T
RAS To RAS Delay (tRRD) Different Rank: 19T, Same Bank Group: 4T, Diff. Bank Group: 16T
Write Recovery Time (tWR) 26T
Read To Read Delay (tRTR) Different Rank: 5T, Different DIMM: 5T, Same Bank Group: 5T, Diff. Bank Group: 1T
Read To Write Delay (tRTW) 18T
Write To Read Delay (tWTR) 7T, Same Bank Group: 14T, Diff. Bank Group: 5T
Write To Write Delay (tWTW) Different Rank: 7T, Different DIMM: 7T, Same Bank Group: 5T, Diff. Bank Group: 1T
Read To Precharge Delay (tRTP) 14T
Four Activate Window Delay (tFAW) 34T
Write CAS Latency (tWCL) 16T
Write RAS To CAS Delay (tRCDW) 19T
Refresh Period (tREF) 14312T
Idle Cycle Limit 8
Dynamic Idle Cycle Counter Geactiveerd
XII